An analytical drain current model considering both electron and lattice temperatures simultaneously for deep submicron ultrathin SOI NMOS devices with self-heating

✍ Scribed by Yu-Guang Chen, ; Shyh-Yih Ma, ; Kuo, J.B.; Zhiping Yu, ; Duton, R.W.

• Book ID: 111676695
• Publisher: IEEE
• Year: 1995
• Tongue: English
• Weight: 700 KB
• Volume: 42
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.381986