An analytical delayed-turn-on model for accumulation-type ultra-thin SOI PMOS devices operating at 77 K

✍ Scribed by J.H. Sim; J.B. Kuo

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 741 KB
• Volume: 37
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(94)90013-2