✦ LIBER ✦
An accurate Coulomb mobility model for MOS inversion layer and its application to NO-oxynitride devices
✍ Scribed by Kondo, M.; Tanimoto, H.
- Book ID
- 114538562
- Publisher
- IEEE
- Year
- 2001
- Tongue
- English
- Weight
- 143 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0018-9383
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