An accurate bilateral FET model suitable for general nonlinear and power applications
✍ Scribed by Vittorio Rizzoli; Alessandra Costanzo
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 792 KB
- Volume
- 10
- Category
- Article
- ISSN
- 1096-4290
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✦ Synopsis
The article introduces a general purpose large-signal functional model of the MESFET based on DC, S-parameter and nonlinear measurements. Physical constraints incorporated in the constitutive relations guarantee the model consistency in large-signal operation and improve the reliability of the parameter extraction process. The model accounts for low-frequency dispersion, third-order intermodulation, forward and reverse ( ) breakdown gate conduction, and temperature effects. It is bilateral in the sense that it is valid for positive, zero, and negative drain-source voltages. It can be coupled to a harmonic-balance algorithm for an efficient simulation of any kind of nonlinear circuit or subsystem, including power amplifiers, resistive mixers, and switches. Extensive comparisons with experimental results are presented for two different devices.