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An accurate analyticalI–Vmodel for sub-90-nm MOSFETs and its application to read static noise margin modeling

✍ Scribed by Behrouz Afzal; Behzad Ebrahimi; Ali Afzali-Kusha; Massoud Pedram


Book ID
111843218
Publisher
SP Zhejiang University Press
Year
2012
Tongue
English
Weight
993 KB
Volume
13
Category
Article
ISSN
1869-1951

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