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An accurate analysis of noise in rectangular bipolar transistors including current crowding

โœ Scribed by G. Blasquez; J. Caminade; K.M. van Vliet

Book ID
107856475
Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
823 KB
Volume
23
Category
Article
ISSN
0038-1101

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This paper presents the results of a simulation study focused on the evaluation of the DC characteristics of an n-p-n SiGe-based heterojunction bipolar transistor (HBT) performing an extremely thin n รพ hydrogenated amorphous silicon (a-Si:H) emitter. The a-Si:H(n)/SiGe(p) structure exhibits an energ