An 18.85 mW 20–29 GHz wideband CMOS low-noise amplifier with 3.85 ± 0.25 dB noise figure and 18.1 ± 1.9 dB gain
✍ Scribed by Yi-Ting Chiu; Yo-Sheng Lin; Jin-Fa Chang
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 838 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A 20–29 GHz wideband CMOS low‐noise amplifier (LNA) with flat and low noise figure (NF), flat and high‐gain (S~21~), and excellent phase linearity property (group‐delay‐variation is only ±22.6 ps across the whole band) is demonstrated.To achieve flat and low NF, the size, layout, and bias of the input transistor were first optimized for minimum NF, and then the inductance of the input inductors was tuned to obtain a slightly under‐damped (flat) NF frequency response. In addition, to achieve flat and high S~21~ and small group‐delay‐variation, the inductive‐peaking technique was adopted in the current‐reused stage for bandwidth enhancement. The LNA consumed 18.85 mW power and achieved flat and low NF of 3.85 ± 0.25 dB, and flat and high S~21~ of 18.1 ± 1.9 dB over the 20–29 GHz band of interest. These are the best NF and S~21~ performances ever reported for a 21.65–26.65 GHz or a 22–29 GHz wideband CMOS LNA. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 2017–2020, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25380