𝔖 Bobbio Scriptorium
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Amorphous Ge substrates: Active or passive participants in electrical transport in ultrathin metal films?

✍ Scribed by B. Nease; A.M. Mack; G.C. Spalding; G. Martinez-Arizala; A.M. Goldman


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
169 KB
Volume
194-196
Category
Article
ISSN
0921-4526

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✦ Synopsis


A comparison has been made between R(T) curves of Bi films grown on ceramic substrates held near helium temperatures with those first grown in this manner, and then overlaid with amorphous Ge (a-Ge) while held at helium temperatures. The dramatic changes in R(T) resulting from the overlay suggest that a-Ge substrates play an active role in electrical transport. This result has implications for the interpretation of experiments on the superconductorinsulator transition.