Fabrication and characterization of low
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P.R. Bandaru; S. Sahni; E. Yablonovitch; J. Liu; H.-Jun Kim; Y.-H. Xie
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Article
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2004
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Elsevier Science
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English
⚖ 204 KB
P-n hetero-junctions were fabricated by depositing p-Ge thin films on n-Si substrates using molecular beam epitaxy and electron-beam evaporation, with processing temperatures less than 450 • C, to be compatible with back-end silicon processing. The surface preparation of the Si substrate prior to Ge