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Amorphisation of GaN during processing with rare earth ion beams

✍ Scribed by K. Lorenz; U. Wahl; E. Alves; T. Wojtowicz; P. Ruterana; S. Ruffenach; O. Briot

Book ID
108268837
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
811 KB
Volume
36
Category
Article
ISSN
0749-6036

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## Abstract The medium range implantation of rare earth ions at room temperature in GaN layers leads to the formation of point defect clusters, basal and prismatic stacking faults from the lowest fluence. When a threshold fluence of about 3 Γ— 10^15^ at/cm^2^ is reached, a highly disordered β€˜nanocry