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Ambipolar, High Performance, Acene-Based Organic Thin Film Transistors

โœ Scribed by Tang, Ming L.; Reichardt, Anna D.; Miyaki, Nobuyuki; Stoltenberg, Randall M.; Bao, Zhenan


Book ID
120292906
Publisher
American Chemical Society
Year
2008
Tongue
English
Weight
299 KB
Volume
130
Category
Article
ISSN
0002-7863

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W and L are, respectively, the semiconductor channel width and length, C i is the capacitance per unit area of the gate dielectric layer, and V G and V T are, respectively, the gate voltage and threshold voltage. V T of the device was determined from the relationship between the square root of I SD