Ambipolar Field-Effect Transistor (FET) and Redox Characteristics of a π-Conjugated Thiophene/1,3,4-Thiadiazole CT-Type Copolymer
✍ Scribed by Takakazu Yamamoto; Takuma Yasuda; Yoshimasa Sakai; Shinji Aramaki
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 150 KB
- Volume
- 26
- Category
- Article
- ISSN
- 1022-1336
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✦ Synopsis
Abstract
Summary: A π‐conjugated charge transfer‐type copolymer consisting of an electron‐donating thiophene and an electron‐accepting 1,3,4‐thiadiazole, P(ThdzTh), underwent facile electrochemical p‐ and n‐doping, as revealed by cyclic voltammetry. The copolymer gave a new ambipolar field‐effect transistor (FET), which showed typical I~DS~ (source–drain current)–V~DS~ (source–drain voltage) curves in both a p‐type working mode and an n‐type working mode. In the n‐type working mode, the polymer showed a carrier mobility of about 5 × 10^−3^ cm^2^ · V^−1^ · s^−1^ and an on/off ratio of about 3 × 10^4^.
n‐Channel field‐effect transistor characteristics of P(ThdzTh).
magnified image__n__‐Channel field‐effect transistor characteristics of P(ThdzTh).