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Ambient stability of chemically passivated germanium interfaces

โœ Scribed by D Bodlaki; H Yamamoto; D.H Waldeck; E Borguet

Book ID
104201981
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
307 KB
Volume
543
Category
Article
ISSN
0039-6028

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Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements
โœ K. Martens; E. Simoen; B. De Jaeger; M. Meuris; G. Groeseneken; H. Maes ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 219 KB

Deep level transient spectroscopy (DLTS) has been applied on high-k Ge capacitors for the first time to investigate interface states in Si-passivated HfO 2 germanium MOS-capacitors. DLTS yielded information about the energy location and density of defects in the Ge bandgap. Evidence was found for an