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Aluminium incorporation for growth optimization of 1.3 μm emission InAs/GaAs quantum dots by molecular beam epitaxy

✍ Scribed by Y.Q. Wei; S.M. Wang; F. Ferdos; J. Vukusic; Q.X. Zhao; M. Sadeghi; A. Larsson

No coin nor oath required. For personal study only.

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Aluminium incorporation for growth optimization of 1.3&#xa0;μm emission InAs/GaAs quantum dots by molecular beam epitaxy