Aluminium-free 980 nm laser diodes

✍ Scribed by M. Pessa; J. Näppi; G. Zhang; A. Ovtchinnikov; H. Asonen

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 615 KB
• Volume: 21
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90351-m

✦ Synopsis

This paper reports on material structures and device properties of GalnAs-Ga(In)As(P) semiconductor lasers intended for pumping erbium-doped fiber amplifiers at fl = 0.98 #m. The layers of these devices can be grown to high structural perfection. The lasers processed from GaInAs-Ga(In)As(P) exhibit very good performance characteristics. The best lasers have threshold current densities as low as 70 A cm 2, internal quantum efficiency of 90%, external differential efficiency of 0.7 mW/mA, and internal waveguide loss well below 10 cm -~. The ridge waveguide lasers operate in fundamental lateral mode to a power level of over 150 mW. They launch a wave power of 400 mW in multi-mode operation and 800 mW in pulse mode. They produce a far-field width of less than 30 ° perpendicular to the junction and about 10 ° parallel to the junction. A power of up to 50 mW at 180 mA drive current has been coupled into a single mode fiber, corresponding to 50% coupling efficiency.