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alloys in fields up to 75 kOe

✍ Scribed by Chakraborty, S.; Rathnayaka, K. D. D.; Naugle, D. G.; Majumdar, A. K.

Book ID: 121417618
Publisher: The American Physical Society
Year: 1999
Tongue: English
Weight: 103 KB
Volume: 60
Category: Article
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.60.440

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0.4 V, voltage between source and drain -6 V, voltage between source and second gate -5.5 V. On changing the bias voltage on the first gate over the range 0.3 to 1.8 V the amplification coefficient of the fets changed, but this did not affect the level of the flicker noise of the transistors. All re