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All-Organic Permanent Memory Transistor Using an Amorphous, Spin-Cast Ferroelectric-like Gate Insulator

✍ Scribed by R. Schroeder; L. A. Majewski; M. Grell


Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
121 KB
Volume
16
Category
Article
ISSN
0935-9648

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