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AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications

✍ Scribed by Chanh Nguyen; Takyiu Liu; M. Chen; Hsiang-chih Sun; D. Rensch

No coin nor oath required. For personal study only.

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✍ Hafizi, M.; Liu, T.; Stanchina, W. E.; Rensch, D. B.; Lui, M.; Brown, Y. K. 📂 Article 📅 1994 🏛 American Institute of Physics 🌐 English ⚖ 804 KB