We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by 90 MeV Ni, 100 MeV Xe and 200 MeV Xe ions. The AZO films with c-axis orientation on SiO 2 -glass substrate were prepared by using a RF-sputter-deposition method at 400 Β°C. We find that the
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Alignment of grain orientation in polycrystalline-SiO2 films induced by high-energy heavy ions
β Scribed by N.S. Shinde; N. Matsunami; T. Shimura; M. Sataka; S. Okayasu; T. Kato; M. Tazawa
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 331 KB
- Volume
- 245
- Category
- Article
- ISSN
- 0168-583X
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