✦ LIBER ✦
AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics
✍ Scribed by Lee, Kai-Hsuan; Chang, Ping-Chuan; Chang, Shoou-Jinn
- Book ID
- 120444902
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 608 KB
- Volume
- 104
- Category
- Article
- ISSN
- 0167-9317
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