AlGaN/GaN FET for DNA hybridization detection

✍ Scribed by Wang, Yuji ;Lu, Wu

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 251 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201001090

✦ Synopsis

Abstract

We present the application of AlGaN/GaN field effect transistor (FET) for detection of biomolecular interactions, demonstrated by a DNA hybridization process. We immobilized a monolayer of single strand probe DNAs on the active gate surface of an AlGaN/GaN FET device and monitored the drain current during the affinity binding process with the presence of both matched and mismatched DNA molecules. The immobilization quality was first studied by X‐ray photoelectron spectroscopy (XPS) and fluorescence images. We then observed from the time‐resolved electrical measurement that significant and specific signals were solely upon the hybridization between the probe DNAs and the matched DNAs. The I~DS~–V~DS~ characteristics of devices before and after hybridization were compared with a notable shift indicating the binding of DNA molecules.