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AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths

✍ Scribed by Moe, Craig G. ;Wu, Yuan ;Piprek, Joachim ;Keller, Stacia ;Speck, James S. ;DenBaars, Steven P. ;Emerson, David


Book ID
105363808
Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
361 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis


Abstract

Distributed Bragg reflectors with up to 21 periods consisting of AlN and Al~0.58~Ga~0.42~N layers were grown by metalorganic chemical vapor deposition. A periodic structure and good interface quality was verified by both transmission electron microscopy and X‐ray diffraction, and was shown to be dependent on the composition of the underlying AlGaN base layer. Reflectivities of 49.8% at 285 nm and 66.6% at 245 nm were obtained with ten period superlattices. A reflectivity of 82.8% at 278 nm was measured for a twenty period structure. (Β© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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