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AlGaInP/GaAs power HBTs design and fabrication

✍ Scribed by Cheng Zhiqun; Sun Xiaowei; Xia Guanqun; Sheng Huaimao; Li-Hong Qin; Qian Rong; Wang Xiangwu


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
126 KB
Volume
24
Category
Article
ISSN
0895-2477

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✦ Synopsis


which is solved by the iterative method. The main step of Ž . matrix᎐vector multiplication for solving 5 is carried out as follows. Ä 4 w xÄ 4 1. Apply MLFMA to compute G ¤ Q H . S w xÄ 4 2. Compute M H as the following procedure: S Ä 4 w xÄ 4 a. compute H ¤ B H


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An accurate Gummel plot model of HBT at a wide range of current le¨el and temperatures has been established. The model contains a bias-and temperature-dependent parasitic resistance and temperature-dependent temperature coefficient of base᎐emitter turn-on ¨oltage. The a¨erage error between the measu