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AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology

โœ Scribed by Li, Xianjie ;Liu, Yingbin ;Feng, Zhen ;Guo, Fan ;Zhao, Yonglin ;Zhao, Run ;Zhou, Rui ;Lou, Chen ;Zhang, Shizu

Book ID
107622247
Publisher
Higher Education Press and Springer
Year
2008
Tongue
English
Weight
266 KB
Volume
1
Category
Article
ISSN
1674-4128

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Proton implantation and rapid thermal an
Proton implantation and rapid thermal annealing effects on GaAs/AlGaAs quantum well infrared photodetectors
โœ Na Li; Ning Li; W Lu; X.Q Liu; X.Z Yuan; Z.F Li; H.F Dou; S.C Shen; Y Fu; M Will ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 177 KB

We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing procedure (950 โ€ข C for 30 s). The photolumine