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AlGaAs/GaAs HBTs with reduced base-collector capacitance by using buried SiO2 and polycrystalline GaAs in the extrinsic base and collector
✍ Scribed by Mochizuki, K.; Nakamura, T.; Tanoue, T.; Masuda, H.; Horiuchi, M.
- Book ID
- 114535307
- Publisher
- IEEE
- Year
- 1993
- Tongue
- English
- Weight
- 270 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0018-9383
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