𝔖 Bobbio Scriptorium
✦   LIBER   ✦

AlAs oxidation process in GaAs/AlGaAs/AlAs heterostructures grown by molecular beam epitaxy on GaAs (n11)A substrates

✍ Scribed by P.O Vaccaro; K Koizumi; K Fujita; T Ohachi


Book ID
108361678
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
348 KB
Volume
30
Category
Article
ISSN
0026-2692

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


GaAs/AlAs super-flat interfaces in GaAs/
✍ K Shinohara; Y Shimizu; S Shimomura; Y Okamoto; N Sano; S Hiyamizu πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 92 KB

E ectively atomically at GaAs=AlAs interfaces over a macroscopic area ("super-at interfaces") have been realized in GaAs=AlAs and GaAs=(GaAs)2 (AlAs)2 quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observ