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[AIP PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006 - Vienna (Austria) (24-28 July 2006)] AIP Conference Proceedings - Dislocation-density Dependent Carrier Lifetime and Stimulated Recombination Threshold in GaN

✍ Scribed by Jarasiunas, K.; Malinauskas, T.; Aleksiejunas, R.

Book ID: 118147066
Publisher: AIP
Year: 2007
Weight: 967 KB
Volume: 893
Category: Article
ISSN: 0094-243X
DOI: 10.1063/1.2729884

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