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Aharonov-Bohm effect in semiconductor micro-structures: novel device possibilities

✍ Scribed by S. Bandyopadhyay; S. Datta; M.R. Melloch


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
364 KB
Volume
2
Category
Article
ISSN
0749-6036

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✦ Synopsis


Recent demonstration

of the Aharonov-Bohm effect in MBE-grown quantum wells has led to the possibility of a novel class of quantum interference devices. We discuss the theory of operation of such devices and show that they can have excellent performance figures which make them attractive candidates for switching devices of the future.