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AES and SIMS analyses of a low-resistance ohmic contact layer of GaP

โœ Scribed by Fujia Zhang; Baosheng Sang; Baojun Li


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
279 KB
Volume
78
Category
Article
ISSN
0169-4332

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The electrical and optical characteristics of Zn + ion-implanted Ni/Au ohmic contacts to p-GaN were investigated. After the preparation of Ni/Au electrode on the surface of p-GaN, the metal/p-GaN contact interface was doped by 35 keV Zn + implantation with fluences of 5 ร‚ 10 15 -5 ร‚ 10 16 cm ร€2 . Su