Advances in Non-Volatile Memory and Stor
β Magyari-Kope, Blanka; Nishi, Yoshio
π Library
π
2019
π Elsevier Science & Technology
π English
β¦ LIBER β¦
π
Advances in Non-Volatile Memory and Storage Technology
β Scribed by Y. Nishi
- Publisher
- Elsevier Ltd, Woodhead Publishing
- Year
- 2014
- Tongue
- English
- Leaves
- 532
- Series
- Woodhead Publishing Series in Electronic and Optical Materials
- Edition
- 1
- Category
- Library
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β¦ Synopsis
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses.
After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices.
Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices.
- Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses
- Examines improvements to flash technology, charge trapping, and resistive random access memory
- Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
β¦ Table of Contents
Content:
Front matter, Pages i-iii
Copyright, Page iv
Contributor contact details, Pages xi-xiii, Y. Nishi, R. Bez, A. Pirovano, R. Shirota, R. Micheloni, L. Crippa, G. Molas, L. Masoero, V. Della Marca, G. Gay, B. de Salvo, S. Raoux, M. Longo, K. Kamiya, M.Y. Yang, K. Shiraishi, B. Magyari-KΓΆpe, Y. Nishi, G. Bersuker, D.C. Gilmer, J.R. Jameson, et al.
Woodhead Publishing Series in Electronic and Optical Materials, Pages xv-xix
1 - Overview of non-volatile memory technology: markets, technologies and trends, Pages 1-24, R. Bez, A. Pirovano
2 - Developments in 3D-NAND Flash technology, Pages 27-74, R. Shirota
3 - Multi-bit NAND Flash memories for ultra high density storage devices, Pages 75-119, R. Micheloni, L. Crippa
4 - Improving embedded Flash memory technology: silicon and metal nanocrystals, engineered charge-trapping layers and split-gate memory architectures, Pages 120-157, G. Molas, L. Masoero, V. Della Marca, G. Gay, B. De Salvo
5 - Phase change memory (PCM) materials and devices, Pages 161-199, S. Raoux, T.J. Ibm
6 - Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques, Pages 200-230, M. Longo
7 - Nanowire phase change memory (PCM) technologies: properties and performance, Pages 231-261, M. Longo
8 - Modeling of resistive random access memory (RRAM) switching mechanisms and memory structures, Pages 262-287,269e-284e, K. Kamiya, M.Y. Yang, B. Magyari-KΓΆpe, Y. Nishi, K. Shiraishi
9 - Metal oxide resistive random access memory (RRAM) technology, Pages 288-340, G. Bersuker, D.C. Gilmer
10 - Conductive bridge random access memory (CBRAM) technology, Pages 341-369, J.R. Jameson, M. Van Buskirk
11 - Memristors for non-volatile memory and other applications, Pages 370-397, G.M. Huang, Y. Ho
12 - Molecular, polymer and hybrid organic memory devices (OMDs), Pages 401-414, A. Kiazadeh, H. Gomes
13 - Nano-electromechanical random access memory (RAM) devices, Pages 415-433, W. Kwon
14 - Ferroelectric random access memory (FRAM) devices, Pages 434-454, T. Eshita, T. Tamura, Y. Arimoto
15 - Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) technology, Pages 455-494, H. Ohno, T. Endoh, T. Hanyu, Y. Ando, S. Ikeda
Index, Pages 495-512
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