Advanced High Voltage Power Device Concepts

✍ Scribed by B. Jayant Baliga (auth.)

• Publisher: Springer-Verlag New York
• Year: 2012
• Tongue: English
• Leaves: 583
• Edition: 1
• Category: Library

✦ Synopsis

The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

✦ Table of Contents

Front Matter....Pages i-xvi
Introduction....Pages 1-19
Silicon Thyristors....Pages 21-56
Silicon Carbide Thyristors....Pages 57-77
Silicon GTO....Pages 79-150
Silicon IGBT (Insulated Gate Bipolar Transistor)....Pages 151-234
SiC Planar MOSFET Structures....Pages 235-292
Silicon Carbide IGBT....Pages 293-383
Silicon MCT....Pages 385-436
Silicon BRT....Pages 437-483
Silicon EST....Pages 485-551
Synopsis....Pages 553-560
Back Matter....Pages 561-568

✦ Subjects

Power Electronics, Electrical Machines and Networks; Circuits and Systems; Electronics and Microelectronics, Instrumentation; Solid State Physics