Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices

✍ Scribed by F.N. Hooge (auth.), Josef Sikula, Michael Levinshtein (eds.)

• Publisher: Springer Netherlands
• Year: 2005
• Tongue: English
• Leaves: 378
• Series: NATO Science Series II: Mathematics, Physics and Chemistry 151
• Edition: 1
• Category: Library

✦ Synopsis

A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport and stochastic phenomena in nanoscale physics. The approach described is to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage-current and thermal dependences. Our current knowledge of measurement methods for mesoscopic devices is summarized to identify directions for future research, related to downscaling effects.

The directions for future research into fluctuation phenomena in quantum dot and quantum wire devices are specified. Nanoscale electronic devices will be the basic components for electronics of the 21st century. From this point of view the signal-to-noise ratio is a very important parameter for the device application. Since the noise is also a quality and reliability indicator, experimental methods will have a wide application in the future.

✦ Table of Contents

1 /f Noise Sources....Pages 3-10
Noise Sources in GaN/AlGaN Quantum Wells and Devices....Pages 11-18
1 /f Noise in Nanomaterials and Nanostructurea: Old Questions in a New Fashion....Pages 19-27
1 /f Spectra as a Consequence of the Randomness of Variance....Pages 29-36
Quantum Phase Locking, 1 /f Noise and Entanglement....Pages 37-44
Shot Noise in Mesoscopic Devices and Quantum Dot Networks....Pages 45-52
Super-Poissonian Noise in Nanostructures....Pages 53-60
Stochastic and Deterministic Models of Noise....Pages 61-68
Noise in Optoelectronic Devices....Pages 71-78
Fluctuations of Optical and Electrical Parameters and Their Correlation of Multiple-Quantum-Well INGAAS/INP Lasers....Pages 79-88
Microwave Noise and Fast/Ultrafast Electronic Processes in Nitride 2DEG Channels....Pages 89-96
Noise of High Temperature Superconducting Bolometers....Pages 97-107
1/ f Noise in MOSTs: Faster is Noisier....Pages 109-120
Experimental Assessment of Quantum Effects in the Low-Frequency Noise and RTS of Deep Submicron MOSFETs....Pages 121-128
Noise and Tunneling Through the 2.5 nm Gate Oxide in Soi MOSFETs....Pages 129-136
Low Frequency Noise Studies of Si Nano-Crystal Effects in MOS Transistors and Capacitors....Pages 137-144
Noise Modelling in Low Dimensional Electronic Structures....Pages 145-152
Correlation Noise Measurements and Modeling of Nanoscale MOSFETs....Pages 153-160
Tunneling Effects and Low Frequency Noise of GaN/GaAlN HFETs....Pages 161-168
High Frequency Noise Sources Extraction in Nanometique MOSFETs....Pages 169-176
Iiformative “Passport Data” of Surface Nano- and Mocrostrucures....Pages 177-186
Noise Measurement Technique....Pages 189-202
Techniques for High-Sensitivity Measurements of Shot Noise in Nanostructures....Pages 203-210
Correlation Spectrum Analyzer: Pringiples and Limits in Noise Measurements....Pages 211-218
Measurement and Analysis Methods for Random Telegraph Signals....Pages 219-226
RTS in Quantum Dots and MOSFETs: Experimental Set-Up with Long-Time Stability and Magnetic Field Compensation....Pages 227-236
Some Considerations for the Construction of Low-Noise Amplifiers in Very Low Frequency Region....Pages 237-244
Measurements of Low Frequency Noise in Nano-Grained RuO 2 +Glass Films Below 1 K....Pages 245-252
Technique for Investigation of Non-Gaussian and Non-Stationary Properties of LF Noise in Nanoscale Semiconductor Devices....Pages 253-260
The Noise Background Suppression of Noise Measuring Set-UP....Pages 261-270
Accuracy of Noise Measurements for 1/ f and GR Noise....Pages 271-278
Radiofrequency and Microwave Noise Metrology....Pages 279-286
Treatment of Noise Data in Laplace Plane....Pages 287-292
Measurement of Noise Parameter Set in the Low Frequency Range: Requirements and Instrumentation....Pages 293-302
Techniques of Interference Reduction in Probe System for Wafer Level Noise Measurements of Submicron Semiconductor Devices....Pages 303-309
Hooge Mobility Fluctuations in n-InSb Magnetoresistors As a Reference for Access Resistance LF-Noise Measurements of SiGe Metamorphic HMOS FETs....Pages 311-318
Optimised Preamplifier for LF-Noise MOSFET Characterization....Pages 319-326
Net of YBCO and LSMO Thermometers for Bolometric Applications....Pages 327-336
Diagnostics of GaAs Light Emitting Diode pn Junctions....Pages 337-344
New Tools For Fast And Senstive Noise Measurements....Pages 345-354
Using a Novel, Computer Controlled Automatic System for LF Noise Measurements Under Point Probes....Pages 355-362

✦ Subjects

Optical and Electronic Materials; Electronic and Computer Engineering; Measurement Science, Instrumentation