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Adsorption strains in porous silicon

✍ Scribed by Dolino, G.; Bellet, D.; Faivre, C.

Book ID
120564709
Publisher
The American Physical Society
Year
1996
Tongue
English
Weight
194 KB
Volume
54
Category
Article
ISSN
1098-0121

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## Abstract The dependence of humidity adsorption in porous silicon (PS) layers on the fabrication conditions (current density and oxidation) has been investigated. As‐prepared and additionally oxidized PS layers have been investigated using physical gas (N~2~) adsorption measurement at 77 K, water