✦ LIBER ✦
Admittance-voltage characteristic of an MOS capacitor formed over p-on-n semiconductor structure
✍ Scribed by Yasuhito Zohta
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 259 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0038-1101
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