Run-to-run process control of a plasma e
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Jill P. Card; Mark Naimo; William Ziminsky
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Article
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1998
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John Wiley and Sons
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English
β 250 KB
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Run-to-run control of a plasma etch process for 8 inch diameter silicon wafers at Digital Semiconductor is determined by maintenance of targeted values of post-etch metrology variables. The post-etch quality variables are extremely sensitive to variation in the etch chamber conditions due to fluctua