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Adaptive control to a dry etch process by microcomputer

✍ Scribed by H. Boehm


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
889 KB
Volume
18
Category
Article
ISSN
0005-1098

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Run-to-run control of a plasma etch process for 8 inch diameter silicon wafers at Digital Semiconductor is determined by maintenance of targeted values of post-etch metrology variables. The post-etch quality variables are extremely sensitive to variation in the etch chamber conditions due to fluctua