✦ LIBER ✦
Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
✍ Scribed by A. F. Tsatsulnikov; W. V. Lundin; A. V. Sakharov; E. E. Zavarin; S. O. Usov; A. E. Nikolaev; N. A. Cherkashin; B. Ya. Ber; D. Yu. Kazantsev; M. N. Mizerov; Hee Seok Park; M. Hytch; F. Hue
- Book ID
- 111444538
- Publisher
- Springer
- Year
- 2010
- Tongue
- English
- Weight
- 211 KB
- Volume
- 44
- Category
- Article
- ISSN
- 1063-7826
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