Active doping instability in n+−p silicon surface avalanche diodes: S. Manzini. Solid-State Electronics, 38, 2, 331 (1995)

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 113 KB
• Volume: 36
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(96)81987-1