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Activation-controlled conduction and metal-insulator transition in the impurity band of narrow-gapp-Hg1−xCdxTe doped crystals

✍ Scribed by V. V. Bogoboyashchii; S. G. Gasan-zade; G. A. Shepel’skii


Book ID
110120346
Publisher
Springer
Year
2000
Tongue
English
Weight
103 KB
Volume
34
Category
Article
ISSN
1063-7826

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