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[ACM Press Proceeding of the thirteenth international symposium - Bangalore, India (2008.08.11-2008.08.13)] Proceeding of the thirteenth international symposium on Low power electronics and design - ISLPED '08 - Analyzing static and dynamic write margin for nanometer SRAMs

✍ Scribed by Wang, Jiajing; Nalam, Satyanand; Calhoun, Benton H.

Book ID: 120591186
Publisher: ACM Press
Year: 2008
Weight: 469 KB
Category: Article
ISBN: 1605581097
DOI: 10.1145/1393921.1393954

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This paper analyzes write ability for SRAM cells in deeply scaled technologies, focusing on the relationship between static and dynamic write margin metrics. Reliability has become a major concern for SRAM designs in modern technologies. Both local mismatch and scaled V DD degrade read stability and

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