Achieving Low-$V_{T}$ Ni-FUSI CMOS by Ultra-Thin $\hbox{Dy}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicate Dielectrics

✍ Scribed by A. Veloso; H. Y. Yu; S. Z. Chang; C. Adelmann; B. Onsia; S. Brus; M. Demand; A. Lauwers; B. J. O'sullivan; R. Singanamalla; G. Pourtois; P. Lehnen; S. Van Elshocht; K. De Meyer; M. Jurczak; P. P. Absil; S. Biesemans

• Book ID: 126750754
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 452 KB
• Volume: 28
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2007.908505