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Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer

✍ Scribed by Hsiao-Wen Zan; Chun-Cheng Yeh; Hsin-Fei Meng; Chuang-Chuang Tsai; Liang-Hao Chen


Book ID
111875246
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
881 KB
Volume
24
Category
Article
ISSN
0935-9648

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