Achievement of a very high electron density in Si δ-doped GaAs grown by metal organic vapour phase epitaxy at 630°C

✍ Scribed by G. Li; C. Jagadish

• Book ID: 108342500
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 683 KB
• Volume: 179
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/s0022-0248(97)00138-3