Acetonitrile sensing characteristics and infrared study of SnO2-based gas sensors

✍ Scribed by Jong Rack Sohn; Hyo Deck Park; Duk Dong Lee

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 317 KB
• Volume: 161
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00135-5

✦ Synopsis

SnO rAl O rNb O rSiO thick-film sensors were fabricated by screen-printing and dipping, and their sensing 2 2 3 2 5 2 characteristics to CH CN gas were investigated. The oxidation products of CH CN on the thick film were analyzed by 3 3 Ž . Fourier transform infrared spectroscopy FTIR using a heatable gas cell. The IR results showed that the products formed by oxidation of CH CN at 3008C on the SnO rAl O rNb O thick film without SiO were mainly CO , H O, and NH , 3 2 2 3 2 5 2 22 3 while on the SnO rAl O rNb O rSiO thick film products such as CO , H O, N O, HNO , and HNO were observed. 2 2 3 2 5 2 2 2 2 3 2 The thick-film devices containing SiO showed high selectivity and negative sensitivity to CH CN due to the presence of 2 3 nitrogen compounds produced by oxidation of CH CN. The optimum amount of Nb O and the optimum operating 3 2 5

temperature were 1.0 wt.% and 3008C, respectively.