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Accurate two-dimensional modelling of the titanium silicide process with an application to a thin base n-p-n bipolar transistor

✍ Scribed by P. Fornara; S. Denorme; E. de Berranger; D. Mathiot; M. Mouis; A. Poncet


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
730 KB
Volume
29
Category
Article
ISSN
0026-2692

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