Accurate RTA-Based Nonquasi-Static MOSFET Model for RF and Mixed-Signal Simulations
β Scribed by Zeqin Zhu; Gildenblat, G.; McAndrew, C.C.; Ik-Sung Lim
- Book ID
- 114620913
- Publisher
- IEEE
- Year
- 2012
- Tongue
- English
- Weight
- 314 KB
- Volume
- 59
- Category
- Article
- ISSN
- 0018-9383
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π SIMILAR VOLUMES
We develop a non-quasi-static MOSFET compact model suitable for simulating RF circuits operating under GHz frequency. The model takes into account the carrier dynamics by incorporating the time delay for the carriers to form a channel. Both the timedomain and frequency-domain expressions are success
## Abstract This paper focuses on the implementation of tableβbased models of highβfrequency transistors for timeβdomain simulators at microwave and mmβwave frequencies. In this frequency range, the channel is not capable of responding to the excitation instantaneously therefore, a delayβtime exist