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Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

✍ Scribed by Yoshioka, Hironori; Nakamura, Takashi; Kimoto, Tsunenobu


Book ID
121277854
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
669 KB
Volume
111
Category
Article
ISSN
0021-8979

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