Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model

✍ Scribed by Lallement, C.; Sallese, J.-M.; Bucher, M.; Grabinski, W.; Fazan, P.C.

• Book ID: 114617004
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 752 KB
• Volume: 50
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2003.809040