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Acceptor excited states in gallium arsenide on silicon

✍ Scribed by A. Freundlich; G. Neu; J.C. Grenet


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
396 KB
Volume
76
Category
Article
ISSN
0038-1098

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Solid-state high-resoluction NMR studies
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Chemical shifts of GaAs and InGaAs were observed by solid-state h&h-resolution NMR. The spectrum of GaAs appeared as a single peak but that of InGaAs consisted of an intense narrow peak and a weak broad one which appeared at =10-U ppm slightly higher field from the former.