Acceptor binding energy in δ-doped GaAs/AlAs multiple-quantum wells
✍ Scribed by Zheng, W. M.; Halsall, M. P.; Harmer, P.; Harrison, P.; Steer, M. J.
- Book ID
- 115518368
- Publisher
- American Institute of Physics
- Year
- 2002
- Tongue
- English
- Weight
- 301 KB
- Volume
- 92
- Category
- Article
- ISSN
- 0021-8979
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## Abstract The photoreflectance (PR) and contactless electroreflectance (CER) spectroscopies have been used to study optical transitions, electronic structure and internal electric fields in beryllium δ‐doped GaAs/AlAs multiple quantum wells (MQWs) designed for terahertz sensors. QW widths ranged
Experimental results on high electric field longitudinal transport in GaAs/AlAs and \(G a A s / G a_{1-x} A l_{x} A s\) multiple quantum wells (MQW) are presented and compared with the prediction of a dielectric continuum model. We draw from our experiments the following four conclusions. (i) In \(