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AC impedance analysis of Au/porous silicon contacts

✍ Scribed by F. Fonthal; T. Trifonov; A. Rodriguez; L.F. Marsal; J. Pallarès

Book ID
104051571
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
333 KB
Volume
83
Category
Article
ISSN
0167-9317

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✦ Synopsis

In this paper we present the AC impedance analysis of Au/porous silicon contacts in order to investigate their conduction mechanisms. The porous silicon layer was obtained by electrochemical etching of the p-Si wafer. The measurements were made between 5 Hz and 10 MHz, at room temperature and in the DC range from 0 to 2 V. An electrical equivalent circuit was used to fit the experimental data. The voltage dependence of the fitting parameters led to a deeper understanding of the physical parameters that limit the conduction mechanisms of the Au/PS contacts.

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